AD712KNZ

制造商:

描述: 精密、低成本、高速、BIFET双通道运算放大器

物料参数

Product Lifecycle:不推荐用于新设计
Package:8-Lead PDIP,8-Lead CerDIP,8-Lead SOIC
# of Amps:2
GBP (typ):4MHz
BW -3 dB (typ):4MHz
Slew Rate (typ):20V/us
Vos (typ):300µV
Vos (max):1mV
Vos TC (typ):7µV/°C
Vos TC (max):20µV/°C
VNoise Density (typ):16nV/rtHz
Current Noise Density (typ):10fA/rtHz
0.1 to 10 Hz VNoise (typ):2µV p-p
Ibias (typ):25pA
Ibias (max):75pA
Ios (typ):10pA
Ios (max):25pA
Iq/Amp (typ):2.8mA
Iq/Amp (max):3.4mA
Vs span (min):9V
Vs span (max):36V
CMRR (typ):76dB
CMRR (min):76dB
Input Architecture:JFET
PSRR DC (typ):95dB
In V+ Headroom (typ):500mV
In V+ Headroom (max):2V
In V- Headroom (typ):3.5V
In V- Headroom (max):4V
Out V+ Headroom (max):2V
Out V+ Headroom (typ):1.1V
Out V- Headroom (typ):1.7V
Out V- Headroom (max):2.5V
Aol (typ):104dB
Min Stable Gain:1V/V
Shutdown:No
Iout (typ):25mA
Over-the-Top:No
Ccm (typ):5.5pF
Cdiff (typ):5.5pF
Open Loop Rout:55Ohms
Feedback Type:Voltage
Package Area:31mm² (8-Lead SOIC) (AD712JRZ)mm²
Eval / Ref Circuit:Evaluation board
Export Classification:EAR99
Automotive:No
Reliability Level:883,EP
Temp Range:-55 to 125°C
Package Finish Code:E3, E4, PB
Package Height:1.75mm (8-Lead SOIC) (AD712JRZ)mm
Launch Date:2008-02-25
Terminal Finish:E3, E4, PB
Temp Range Code:NA
EP:Yes
Design Tools:LTspice
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库存数量:0
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